• Life-time measurement system for silicon ingots
• By direct current anodizing (JIS)
• Measurement samples:
  Silicon bulk, PrismS (JIS), Ingot condition
• Meas. range:
  approx. 50 uS to 20 mS
• Data processing by oscilloscope and PC (dedicated software)
• Non-contact photoconduction vibration decay method is available: HF-90R (Contact us for further information)

Silicon Ingots
Silicon bulk
PrismS (JIS)

• High speed thickness measurement and sorting for silicon wafers
• 1 point / 5 point thickness measurement available
• 1 piece: approx. 9 seconds at 5 points cross measurement
• The number of Loader cassette / Unloader cassette: Designed by specification
• Measurement range: + - 0.5 um (by electric capacitance method)
• Resolution: 0.1 um (by electric capacitance method)

Silicon wafers
- Lapped
- Etched
- Polished
- Mirror

• Simple measurement unit for resistivity checking and thickness measurement
• Resistivity: Eddy current (Non-contact) method
• Thickness: Gauge method
• Well suited for silicon wafers of solar cells and / or reclaimed wafers
• Resistivity sorting (For example): 0.5 to 1 to 10 Ohm-cm (Other sorting range is available)
• Easy operation by putting samples on the measurement stage
• Built in PN type checker (Resistivity + PN) is available (RC-2PN)

Silicon wafers
- Lapped
- Etched
- Polished
- Mirror
- Bulk